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3LN02C MOSFET N-Channel 30V 300mA/0.3A SOT-23/SC-59 marking YD low on-resistance/fast switch

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Product description
最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage10V
最大漏极电流Id Drain Current300mA/0.3A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.9Ω/Ohm @150mA,4V
开启电压Vgs(th) Gate-Source Threshold Voltage0.4-1.3V
耗散功率Pd Power Dissipation250mW/0.25W
Description & ApplicationsN-Channel Silicon MOSFET General-Purpose Switching Device Applications SANYO Semiconductors N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features Silicon N-Channel MOS FET General-Purpose Switching Device Applications Low ON resistance Ultrahigh-speed switching 2.5V drive
描述与应用三洋半导体 N-沟道硅MOSFET 通用开关设备应用 特性 硅N沟道MOS FET 通用开关设备应用 低导通电阻 超高速开关 2.5V驱动
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