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3SK135A MOSFET N-Channel 20V 25mA SOT-143 marking U65 RF amplifier/UHF TV tuning /high gain
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
| 最大漏极电流Id Drain Current | 25mA |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -2/-0.7 |
| 耗散功率Pd Power Dissipation | 200mW/0.2W |
| Description & Applications | MOS FIELD EFFECT TRANSISTOR RF AMP. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD Features MOS FIELD EFFECT TRANSISTOR RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PIN MINI MOLD Suitable for use as RF amplifier in UHF TV tuner Low Ciss High gain Low NF |
| 描述与应用 | MOS场效应晶体管 射频放大器。 VHF电视调谐器 N-沟道硅双栅MOS场效应晶体管 4PIN MINI模具 特性 MOS场效应晶体管 射频放大器 UHF电视调谐 N-沟道硅双栅MOS场效应晶体管 4 引脚 迷你模具 适合用于UHF电视调谐器中RF放大器 Ciss低 高增益 低NF |
