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3sk191 MESFET-N channel 12V 10mA-32mA -5V SOT-243 marking NI RF application

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Product description
最大源漏极电压Vds
Drain-Source Voltage
12V
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-6V
漏极电流(Vgs=0V)IDSS
Drain Current
10mA-32mA
关断电压Vgs(off)
Gate-Source Cut-off Voltage
-5V
耗散功率Pd
Power Dissipation
150mW/0.15W
Description & ApplicationsGaAs DUAL-GATE FET. Applications: UHF TV TUNER RF AMPLIFIER.
描述与应用砷化镓双栅场效应管. 应用: 超高频电视调谐器射频放大器.
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