My order
Share to:  
Location:Home > Stock Inventory > Product Details

3SK284 MESFET-N channel -6V 4mA-16mA -0.5V -- -1.5V SOT-343 marking U1 RF application

Hot selling goods

Product description
最大源漏极电压Vds
Drain-Source Voltage
-6V
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-4V
漏极电流(Vgs=0V)IDSS
Drain Current
4mA-16mA
关断电压Vgs(off)
Gate-Source Cut-off Voltage
-0.5V -- -1.5V
耗散功率Pd
Power Dissipation
100mW/0.1W
Description & ApplicationsTOSHIBA FIELD EFFECT TRANSISTER .GaAs N-channel Dual Gate MES FET .Applications: TV TUNER,UHF RF AMPLIFIER APPLICATIONS.
描述与应用东芝场效应型晶体管. 砷化镓N沟道双栅MES FET. 应用: 电视调谐器,超高频 RF放大器.
List of related models

Record / license number:粤ICP备14038557号 Copyright ©: 2018 Eric Online Store Copyright ownership and reservation of all rights
Tel:86-755-88869068
Working hours: Mon to Sat 8: 00 ~ 22: 00