My order
Share to:  
Location:Home > Stock Inventory > Product Details

3SK318 MOSFET N-Channel 6V 20mA SOT-343/CMPAK-4/SC70-4 marking YB Excellent cross modulation characteristics/low voltage operating/low noise

Hot selling goods

Product description
最大源漏极电压Vds Drain-Source Voltage6V
最大栅源极电压Vgs(±) Gate-Source Voltage6V
最大漏极电流Id Drain Current20mA
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs(th) Gate-Source Threshold Voltage0.5-1.0V
耗散功率Pd Power Dissipation100mW/0.1W
Description & ApplicationsSilicon N-Channel Dual Gate MOS FET UHF RF Amplifier Features •Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) •Excellent cross modulation characteristics •Capable low voltage operation;
描述与应用硅N沟道双栅MOS FET UHF射频放大器 •低噪音特点;(NF=1.4 dB(典型值),在f=900兆赫) •优秀的交叉调制特性 •低电压工作能力;
List of related models

Record / license number:粤ICP备14038557号 Copyright ©: 2018 Eric Online Store Copyright ownership and reservation of all rights
Tel:86-755-88869068
Working hours: Mon to Sat 8: 00 ~ 22: 00