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5LN01C MOSFET N-Channel 50V 100mA/0.1A SOT-23/SC-59 marking YB low on-resistance/ultra highspeed switch

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Product description
最大源漏极电压Vds Drain-Source Voltage50V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current100mA/0.1A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance7.8Ω/Ohm @50mA,4V
开启电压Vgs(th) Gate-Source Threshold Voltage1.2V
耗散功率Pd Power Dissipation250mW/0.25W
Description & ApplicationsN-channel Silicon MOSFET General -Purpose Switching Device Application Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive.
描述与应用N沟道硅MOSFET 通用开关设备应用程序 •低导通电阻 •超高速开关 •2.5V驱动器
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