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H5N5006 MOSFET N-Channel 500V 3A TO-252/D-PAK marking 5N5006 low gate charge

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Product description
最大源漏极电压Vds Drain-Source Voltage500V
最大栅源极电压Vgs(±) Gate-Source Voltage30V
最大漏极电流Id Drain Current3A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance3.0Ω/Ohm 1.5A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage3-4.5V
耗散功率Pd Power Dissipation30W
Description & Applications• Low on-resistance: RDS(on) = 2.5 Ω typ. •Low leakage current: IDSS = 1 µA max. (at VDS = 500 V) •High speed switching: tf = 15 ns typ. (at VGS = 10 V, VDD ≅ 250 V, ID= 1.5 A) • Low gate charge: Qg = 14 nC typ. (at VDD = 400 V, VGS = 10 V, ID = 3A) • Avalanche ratings
描述与应用•低电阻RDS(ON)=2.5Ω(典型值)。 •低漏电流IDSS=1μA最大。 (VDS=500 V) •高速开关:TF=15纳秒典型。 (VGS=10 V,VDD≅250 V,ID=1.5 A) •低栅极电荷:QG=14 NC(典型值)。 (VDD= 400 V,VGS=10V,ID= 3 A) •雪崩额定值
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