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AM2319P-T1 MOSFET P-Channel -30V -2.1A 0.20ohm SOT-23 marking 294TA fast switch low gate charge
| 最大源漏极电压Vds Drain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | -2.1A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.20Ω @-2.1A,-10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -1.3 |
| 耗散功率Pd Power Dissipation | 1.25W |
| Description & Applications | • Low rDS(on) Provides Higher Efficiency and Extends Battery Life • Fast Switch • Low Gate Charge • Miniature SOT-23 Surface Mount Package Saves Board Space |
| 描述与应用 | •低RDS（ON） 提供更高的效率和 延长电池寿命 •快速开关 •低栅极电荷 •微型SOT-23表面贴装封装 节省电路板空间 |
