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AO3411 MOSFET P-Channel SOT-23 marking AB6
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | ±8V |
| 最大漏极电流Id Drain Current | -4.4A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | |
| 耗散功率Pd Power Dissipation | 1.4W |
| Description & Applications | The AO3411 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. |
| 描述与应用 | AO3411采用先进沟道技术，提供出色的RDS（ON），低栅极电荷和操作与栅极电压可低至1.8V。这个装置是适合用于作为负载开关或PWM应用。 |
