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AOD412 MOSFET N-Channel 30V 85A TO-252/D-PAK marking D412
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 85A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 7mΩ/Ohm @20A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.2V |
| 耗散功率Pd Power Dissipation | 100W |
| Description & Applications | The AOD412 uses advanced trench technology to provide excellent RDS(ON) low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOD412 is Pb-free (meets ROHS & Sony 259 specifications). AOD412L is a Green Product ordering option. AOD412 and AOD412L are electrically identical. |
| 描述与应用 | AOD412采用先进的沟槽技术 提供优良的的RDS（ON） 低栅极充低 栅极电阻。该设备非常适合使用 作为一个高侧开关CPU核心电源转换。 标准产品AOD412是无铅（符合ROHS 索尼259规格）。 AOD412L是一种绿色环保产品订购选项。 AOD412和AOD412L 电相同 |
