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AP2623Y Complex FET -30V -2A SOT-163/SOT23-6/CPH6 marking Y7E1 low on-resistance
| 最大源漏极电压Vds Drain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | -2A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 170mΩ@ VGS = -10V,ID = -2A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -1~-3V |
| 耗散功率Pd Power Dissipation | 1.2W |
| Description & Applications | P-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge Low On-resistance RDS(ON) Surface Mount Package Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.The SOT-26 package is universally used for all commercial-industrial applications. |
| 描述与应用 | P沟道增强型功率MOSFET 低栅极电荷 低导通电阻RDS（ON） 表面贴装封装 描述 先进的功率MOSFET采用先进的加工技术，以实现尽可能低的导通电阻，非常高效和成本效益装置。SOT-26封装普遍用于所有商业，工业应用。 |
