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APM3054NVC MOSFET N-Channel 30V 15A SOT-223/SC-73/TO261-4 marking APM3054N high density battery design
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 15A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.054Ω/Ohm 12A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.3V |
| 耗散功率Pd Power Dissipation | 1.25W |
| Description & Applications | 30V/15A RDS(ON) =48mΩ(typ.) @ VGS=10V RDS(ON)=75mΩ(typ.) @ VGS=4.5V Super High Dense Cell Design High Power and Current Handling Capability TO-252 and SOT-223 Package |
| 描述与应用 | 30V/15A RDS（ON） =48mΩ（典型值）@ VGS= 10V RDS（ON）=的75mΩ（典型值）@ VGS= 4.5V 超级高密度电池设计 高功率和电流处理能力 TO-252和SOT-223封装 |
