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BB404 N MOS FET IC 12V 25MA SOT23 UHF/VHF RF Amplifier
| Drain-Source Voltage （Vds） | 12V |
|
Vgs(±) Gate-Source Voltage |
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| Drain Current （Id） | 25MA |
| Drain-Source On-State （Rds） | |
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Vgs （th） Gate-Source Threshold Voltage |
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| Power dissipation （Pd） | 0.15W |
| Description & Applications | Build in Biasing Circuit MOS FET IC
UHF/VHF RF Amplifier
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• High gain;
(PG = 29 dB typ. at f = 200 MHz)
• Low noise characteristics;
(NF = 1.2 dB typ. at f = 200 MHz)
• Wide supply voltage range;
Applicable with 5V to 9V supply voltage.
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4R(SOT-143 var.)
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