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BC808-40W PNP transistors(BJT) -30V -500mA/-0.5A 80MHz 250~600 -700mV/-0.7V SOT-323/SC-70 marking 5G high current

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-30V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−25V
集电极连续输出电流IC
Collector Current(IC)
−500mA/-0.5A
截止频率fT
Transtion Frequency(fT)
200MHz
直流电流增益hFE
DC Current Gain(hFE)
250~600
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−700mV/-0.7V
耗散功率Pc
PoWer Dissipation
250mW/0.25W
Description & Applications For general AF applications High collector current High current gain Low collector-emitter saturation voltage Comlementary types: BC817, BC818 (NPN)
描述与应用 对于一般AF应用 高集电极电流 高电流增益 低集电极 - 发射极饱和电压 互补:BC817,BC818(NPN)
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