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BC818-25 NPN Transistors(BJT) 30V 500mA/0.5A 170MHz 160~400 700mV/0.7V SOT-23/SC-59 marking 6F
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 30V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 25V |
集电极连续输出电流IC Collector Current(IC) | 500mA/0.5A |
截止频率fT Transtion Frequency(fT) | 170MHz |
直流电流增益hFE DC Current Gain(hFE) | 160~400 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 700mV/0.7V |
耗散功率Pc Power Dissipation | 330mW/0.33W |
Description & Applications | NPN Silicon AF Transistors For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807, BC808 (PNP) |
描述与应用 | NPN硅晶体管自动对焦 对于一般AF应用程序 高集电极电流 高电流增益 低集电极 - 发射极饱和电压,低管压降 互补类型:BC807,BC808(PNP) |