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BC847PN NPN+PNP Complex Bipolar Transistor 50V/-50V 100mA/-100mA 200~450 SOT-363 marking 1P switch and digital circuit application

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V/-50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)45V/-45V
集电极连续输出电流IC Collector Current(IC)100mA/-100mA
截止频率fT Transtion Frequency(fT)250MHz
直流电流增益hFE DC Current Gain(hFE)200~450
管压降VCE(sat) Collector-Emitter Saturation Voltage200mV
耗散功率Pc Power Dissipation250mW
Description & ApplicationsFeatures • NPN/PNP Silicon AF Transistor Arrays • For AF input stage and driver applications • High current gain • Low collector-emitter saturation voltage • Two (galvanic) internal isolated NPN/PNP transistor in one package • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101
描述与应用特点 •NPN / PNP硅AF晶体管阵列 •对于AF输入级和驱动器应用 •高电流增益 •低集电极 - 发射极饱和电压 •两个(电流)的内部分离NPN/ PNP晶体管在一个包 •无铅(符合RoHS)包1) •符合AEC Q101
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