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BC850CW NPN Transistors(BJT) 50V 100mA/0.1A 250MHz 420~800 200mV/0.2V SOT-323/SC-70 marking 2G medium power
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 45V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 截止频率fT Transtion Frequency(fT) | 250MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 420~800 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 200mV/0.2V |
| 耗散功率Pc Power Dissipation | 250mW/0.25W |
| Description & Applications | NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC856W, BC857W, BC858W BC859W, BC860W (PNP) |
| 描述与应用 | NPN硅晶体管自动对焦 AF输入级和驱动器应用 高电流增益 低集电极 - 发射极饱和电压 低噪音30 Hz和15千赫之间 互补类型： BC856W，BC857W，BC858W BC859W，BC860W（PNP） |
