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BC858A PNP transistors(BJT) -30V -100mA/-0.1A 100MHz 125~250 -650mV/-0.65V SOT-23/SC-59 marking 3J switch/amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
−30V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−30V
集电极连续输出电流IC
Collector Current(IC)
−100mA/-0.1A
截止频率fT
Transtion Frequency(fT)
100MHz
直流电流增益hFE
DC Current Gain(hFE)
125~250
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−650mV/-0.65V
耗散功率Pc
PoWer Dissipation
350mW/0.35W
Description & ApplicationsSURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856,BC857 and BC858 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications.
描述与应用表面贴装PNP硅晶体管 产品描述: 中央半导体BC856,BC857和BC858系列类型PNP硅 晶体管制造外延平面工艺,环氧树脂模压在一个表面贴装封装,专为一般用途的开关和放大器应用。
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