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BCP55-16 NPN Transistors(BJT) 60V 1A 100MHz 100~250 500mV/0.5V SOT-223 marking BCP55 16
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 60V |
| 集电极连续输出电流IC Collector Current(IC) | 1A |
| 截止频率fT Transtion Frequency(fT) | 100MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 100~250 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率Pc Power Dissipation | 1.5W |
| Description & Applications | NPN Silicon AF Transistors For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP51 ... BCP53 (PNP) |
| 描述与应用 | NPN硅晶体管自动对焦 AF驱动器和输出 高集电极电流 低集电极 - 发射极饱和电压 互补类型：BCP51... BCP53（PNP） |
