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BCR08PN NPN+PNP Complex Bipolar Digital Transistor 50V/-50V 100mA/-100mA 70 250mW/0.25W SOT-363/SC-88/SC70-6 marking WF switching inverting interface driver circuit

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V/-50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V/-50V
集电极连续输出电流IC Collector Current(IC)100mA/-100mA
Q1基极输入电阻R1 Input Resistance(R1)2.2KΩ/Ohm
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2)47KΩ/Ohm
Q1电阻比(R1/R2) Q1 Resistance Ratio0.047
Q2基极输入电阻R1 Input Resistance(R1)2.2KΩ/Ohm
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2)47KΩ/Ohm
Q2电阻比(R1/R2) Q2 Resistance Ratio0.047
直流电流增益hFE DC Current Gain(hFE)70
截止频率fT Transtion Frequency(fT)170MHz
耗散功率Pc Power Dissipation250mW/0.25W
Description & ApplicationsFeatures •NPN/PNP Silicon Digital Transistor Array •Switching circuit, inverter, interface circuit,driver circuit •Two (galvanic) internal isolated NPN/PNPTransistors in one package •Built in bias resistor (R1=2.2k , R2=47k )
描述与应用特点 •NPN / PNP硅数字晶体管阵列 •开关电路,逆变器,接口电路,驱动电路 •(电流)的内部分离NPN/ PNPTransistors在一个包 •内置偏置电阻(R1=2.2K,R2=47K?)
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