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BCR133S NPN+NPN 50V 0.1A R1=R2=10KΩ 130MHZ SOT363 MARKING WC

Price (excluding freight):
Batches(PCS):
$0.072
≤99
$0.065
≤499
$0.054
≤999
$0.047
≤2999
$0.043
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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) 50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) 50V
集电极连续输出电流IC Collector Current(IC) 100MA/0.1A
Q1基极输入电阻R1 Input Resistance(R1) 10KΩ
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) 10KΩ
Q1电阻比(R1/R2) Q1 Resistance Ratio 1
Q2基极输入电阻R1 Input Resistance(R1) 10KΩ
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) 10KΩ
Q2电阻比(R1/R2) Q2 Resistance Ratio 1
直流电流增益hFE DC Current Gain(hFE) 30
截止频率fT Transtion Frequency(fT) 130MHZ
耗散功率Pc Power Dissipation 250MW/0.25W
Description & Applications * NPN Silicon Digital Transistor * Switching in circuit, inverter, interface circuit, drive circuit * Built in bias resistor (R1= 10 kΩ, R2= 10 kΩ)
描述与应用 * NPN硅数字晶体管 * 开关电路,逆变器,接口电路,驱动电路 * 内置偏置电阻(R1=10kΩ的,R2=10kΩ的)
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