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BCR22PN NPN+PNP Complex Bipolar Digital Transistor 50V/-50V 100mA/-100mA HEF=50 R1=R2=22KΩ 250mW/0.25W SOT-363/SC-88/SC70-6 marking WP switching inverting interface driver circuit
| Q1 Collector-Base Voltage(VCBO) | 50V |
| Q1Collector-Emitter Voltage(VCEO) | 50V |
| Q1 Collector Current(IC) | 100MA/0.1A |
| Q2 Collector-Base Voltage(VCBO) | -50V |
| Q2Collector-Emitter Voltage(VCEO) | -50V |
| Q2Collector Current(IC) | -100MA/-0.1A |
| Q1 Input Resistance(R1) | 22KΩ |
| Q1Base-Emitter Resistance(R2) | 22KΩ |
| Q1(R1/R2) Q1 Resistance Ratio | 1 |
| Q2 Input Resistance(R1) | 22KΩ |
| Q2Base-Emitter Resistance(R2) | 22KΩ |
| Q2(R1/R2) Q2 Resistance Ratio | 1 |
| DC Current Gain(hFE) Q1/Q2 | 50/50 |
| Transtion Frequency(fT) Q1/Q2 | 130MHZ/130MHZ |
| Power Dissipation | 250MW/0.25W |
| Description & Applications |
NPN/PNP Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit
Two (galvanic) internal isolated NPN/PNP
Transistors in one package
Built in bias resistor (R1=22k, R2=22k)
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