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BCW60D NPN Transistors(BJT) 32V 100mA/0.1A 125MHz 380~630 350mV/0.35V SOT-23/SC-59 marking AD generalswitch and amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 32V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 32V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 截止频率fT Transtion Frequency(fT) | 100MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 380~630 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 350mV/0.35V |
| 耗散功率Pc Power Dissipation | 250mW/0.25W |
| Description & Applications | • PNP Silicon Epitaxial Planar Transistors • Suited for low level, low noise, low frequency applications in hybrid cicuits. • Low Current, Low Voltage. • As complementary types, BCW60 Series NPN transistors are recommended. |
| 描述与应用 | •PNP硅外延平面型晶体管 •适合于低层次，低噪音，低高频应用在混合cicuits的。 •低电流，低电压。 •互补类型，BCW60系列NPN晶体管建议。 |
