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BCX42 NPN Transistors(BJT) 125V 1A 150MHz 25~63 900mV/0.9V SOT-23/SC-59 marking DK
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 125V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 125V |
| 集电极连续输出电流IC Collector Current(IC) | 1A |
| 截止频率fT Transtion Frequency(fT) | 150MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 25~63 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 900mV/0.9V |
| 耗散功率Pc Power Dissipation | 330mW/0.33W |
| Description & Applications | PNP Silicon AF an Swiching Transistors For general AF applications High breakdown voltage Low collector-emitter saturation voltage Complementary types: BCX41, BSS64 (NPN) |
| 描述与应用 | PNP硅AF Swiching的晶体管 高击穿电压 低集电极 - 发射极饱和电压 互补类型：BCX41 BSS64（NPN） |
