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BCX53-10 PNP transistors(BJT) -100V -1A 50MHz 63~160 -500mV/-0.5V SOT-89/MPT marking BE radio amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | −100V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −80V |
集电极连续输出电流IC Collector Current(IC) | -1A |
截止频率fT Transtion Frequency(fT) | 50MHz |
直流电流增益hFE DC Current Gain(hFE) | 63~160 |
管压降VCE(sat) Collector-Emitter SaturationVoltage | −500mV/-0.5V |
耗散功率Pc PoWer Dissipation | 1.3W |
Description & Applications | PNP medium power transistors FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Medium power general purposes • Driver stages of audio amplifiers. |
描述与应用 | PNP中等功率晶体管 特点 •高电流(最大1 A) •低电压(最大80 V)。 应用 •中等功率一般用途 •音频放大器驱动阶段。 |