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BCX56-10 NPN Transistors(BJT) 100V 1A 100MHz 63~160 2V SOT-89/SC-62/MPT3 marking DF linear regulator low-sideswitch MOSFETdriver amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 100V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 80V |
集电极连续输出电流IC Collector Current(IC) | 1A |
截止频率fT Transtion Frequency(fT) | 100MHz |
直流电流增益hFE DC Current Gain(hFE) | 63~160 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 2V |
耗散功率Pc Power Dissipation | 1W |
Description & Applications | NPN medium power transistors Features High current Two current gain selections High power dissipation capability Applications Linear voltage regulators Low-side switches MOSFET drivers Amplifiers |
描述与应用 | NPN中等功率晶体管 特点 高电流 两个电流增益的选择 高功率耗散能力 应用 线性稳压器 低边开关 MOSFET驱动器 放大器 |