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BDP955 NPN Transistors(BJT) 140V 3A 100MHz 15 800mV/0.8V SOT-223 marking BDP955
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 140V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 120V |
集电极连续输出电流IC Collector Current(IC) | 3A |
截止频率fT Transtion Frequency(fT) | 100MHz |
直流电流增益hFE DC Current Gain(hFE) | 15 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 800mV/0.8V |
耗散功率Pc Power Dissipation | 3W |
Description & Applications | NPN Silicon AF Power Transistor For AF driver and output stages High collector current High current gain Low collector-emitter saturation voltage Complementary types: BDP952 ... BDP956 (PNP) |
描述与应用 | AF功率晶体管NPN硅 对于AF驱动器和输出级 高集电极电流 高电流增益 低集电极 - 发射极饱和电压 可互补类型:BDP952... BDP956(PNP) |