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BF660W PNP transistors(BJT) -40V -25mA 700MHz 30 SOT-323/SC-70 marking LE VHFoscillator
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | −40V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −30V |
集电极连续输出电流IC Collector Current(IC) | −25mA |
截止频率fT Transtion Frequency(fT) | 700MHz |
直流电流增益hFE DC Current Gain(hFE) | 30 |
管压降VCE(sat) Collector-Emitter SaturationVoltage | |
耗散功率Pc PoWer Dissipation | 280mW/0.28W |
Description & Applications | PNP Silicon RF Transistor • For VHF oscillator applications |
描述与应用 | PNP硅射频晶体管 •对于VHF振荡器应用 |