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BF821 PNP transistors（BJT） -300V -50mA 60MHz 50 -800mV/-0.8V SOT-23/SC-59 marking IW low current/high voltage
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | −300V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −300V |
| 集电极连续输出电流IC Collector Current(IC) | −50mA |
| 截止频率fT Transtion Frequency(fT) | 60MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 50 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | −800mV/-0.8V |
| 耗散功率Pc PoWer Dissipation | 250mW/0.25W |
| Description & Applications | PNP high-voltage transistors FEATURES • Low current (max. 50 mA) • High voltage (max. 300 V). APPLICATIONS • Telephony and professional communication equipment. |
| 描述与应用 | PNP高压晶体管 特点 •低电流（最大50毫安） •高电压（最大300 V）。 应用 •专业的电话和通信设备 |
