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BFG235 NPN Transistors(BJT) 25V 300mA/0.3A 4Ghz~5.5Ghz 50~250 SOT-223 marking BFG235 widebandoutput amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 25V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 15V |
| 集电极连续输出电流IC Collector Current(IC) | 300mA/0.3A |
| 截止频率fT Transtion Frequency(fT) | 4Ghz~5.5Ghz |
| 直流电流增益hFE DC Current Gain(hFE) | 50~250 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | |
| 耗散功率Pc Power Dissipation | 2W |
| Description & Applications | NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 120mA to 250mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor • fT = 5.5 GHz |
| 描述与应用 | NPN硅RF晶体管 •对于低-失真的的的宽带输出放大器中 天线和电信中的阶段 高达在集电极电流从至2 GHz的系统中 120毫安到250mA •DECT和PCN系统上的的电源放大器，适用于 •集成的发射极镇流电阻器 •FT =5.5 GHz的 |
