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BFG97 NPN Transistors(BJT) 20V 100mA/0.1A 5.5GHz 80 SOT-223/SC-73 marking BFG97
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 20V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 15V |
集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
截止频率fT Transtion Frequency(fT) | 5.5GHz |
直流电流增益hFE DC Current Gain(hFE) | 80 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | |
耗散功率Pc Power Dissipation | 1W |
Description & Applications | NPN 5 GHz wideband transistor DESCRIPTION NPN planar epitaxial transistor mounted in a plastic SOT223 envelope. It features excellent output voltage capabilities, and is primarily intended for use in MATV applications. PNP complement is the BFG31. |
描述与应用 | 5 GHz的宽带晶体管NPN 说明 NPN平面外延晶体管装在一个塑料SOT223信封。它具有出色的输出电压能力,主要用于在美亚应用程序中使用。 PNP补充BFG31。 |