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BFP450 NPN Transistors(BJT) 10V 100mA/0.1A 24GHz 50~150 SOT-343 marking AN medium power amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 10V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 4.5V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 截止频率fT Transtion Frequency(fT) | 24GHz |
| 直流电流增益hFE DC Current Gain(hFE) | 50~150 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | |
| 耗散功率Pc Power Dissipation | 450mW/0.45W |
| Description & Applications | NPN Silicon RF Transistor For medium power amplifiers Compression point P-1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz Transition frequency fT = 24 GHz Gold metallization for high reliability SIEGET 25 GHz fT - Line |
| 描述与应用 | NPN硅RF晶体管 对于中等功率放大器 压缩点P-1dB= 26.5 dBm(在1.8 GHz的最大值）。 最大可用增益GMA =15.5分贝在1.8 GHz 噪声系数F =1.25 dB，在1.8 GHz的 过渡频率fT= 24 GHz的 黄金金属的高可靠性 SIEGET？ 25 GHz的FT - 线 |
