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BFQ149 PNP transistors（BJT） -20V -100mA/-0.1A 5GHz 50 SOT-89/SC-62 marking FG high output voltage
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | −20V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −15V |
| 集电极连续输出电流IC Collector Current(IC) | −100mA/-0.1A |
| 截止频率fT Transtion Frequency(fT) | 5GHz |
| 直流电流增益hFE DC Current Gain(hFE) | 50 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | |
| 耗散功率Pc PoWer Dissipation | 1W |
| Description & Applications | PNP 5 GHz wideband transistor FEATURES • High output voltage capability • High gain bandwidth product • Good thermal stability • Gold metallization ensures excellent reliability |
| 描述与应用 | PNP5 GHz的宽带晶体管 特点 •高输出电压能力 •高增益带宽积 •良好的热稳定性 •黄金金属确保卓越的可靠性 |
