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BFR181W NPN Transistors(BJT) 20V 20mA 8Ghz 50~200 SOT-323/SC-70 marking RF low noise，high gain wideband amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 12V |
| 集电极连续输出电流IC Collector Current(IC) | 20mA |
| 截止频率fT Transtion Frequency(fT) | 8Ghz |
| 直流电流增益hFE DC Current Gain(hFE) | 50~200 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | |
| 耗散功率Pc Power Dissipation | 175mW/0.175W |
| Description & Applications | NPN Silicon RF Transistor For low-noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz |
| 描述与应用 | NPN硅RF晶体管 低噪声，高增益宽带放大器集电极电流从0.5mA到12mA fT = 8 GHz F = 1.45dB at 900 MHz |
