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BFR92AW NPN Transistors(BJT) 20V 25mA 5GHz 90 SOT-323/SC-70 marking P2 mixer and oscillator
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 15V |
| 集电极连续输出电流IC Collector Current(IC) | 25mA |
| 截止频率fT Transtion Frequency(fT) | 5GHz |
| 直流电流增益hFE DC Current Gain(hFE) | 90 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | |
| 耗散功率Pc Power Dissipation | 300mW/0.3W |
| Description & Applications | NPN 5 GHz wideband transistor FEATURES • High power gain • Gold metallization ensures excellent reliability • SOT323 (S-mini) package. APPLICATIONS It is designed for use in RF amplifiers, mixers and oscillators with signal frequencies up to 1 GHz. |
| 描述与应用 | 5 GHz的宽带晶体管NPN 特点 •高功率增益 •黄金金属确保卓越的可靠性 •SOT323（S-迷你）封装。 应用 它是专为在RF放大器中使用 混频器和振荡器信号 高达1 GHz的频率。 |
