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EEPROMs-serial memory BR93LC46RFJ-WNF MSOP8 marking L46R
| 存储器格式 Format - Memory | EEPROMs - 串行 EEPROMs - Serial |
| 存储器类型 Memory Type | EEPROM |
| 存储容量 Memory Size | 1K (64 x 16) |
| 速度 Speed | 1MHz |
| 接口 Interface | 8K/串行 8K/Serial |
| 电源电压 Voltage - Supply | 2.7 V ~ 5.5 V |
| Description & Applications | 64×16bits serial EEPROM The BR93LC46-W series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 64 words × 16 bits (1,024 bits), and each word can be accessed individually and data read from it and written to it. Operation control is performed using five types of commands. The commands, addresses, and data are input through the DI pin under the control of the CS and SK pins. In a write operation, the internal status signal (READY or BUSY) can be output from the DO pin. Applications VCRs, TVs, printers, car stereos, cordless telephones, short wave radios, programmable DIP switches, and other battery-powered equipment requiring low voltage and low current Features 1) 64 words × 16 bits EEPROM 2) Operating voltage range When reading : 2.0 to 5.5V When writing : 2.7 to 5.5V3) Low current consumption Operating (at 5V) : 3mA (Max.) Standby (at 5V) : 5µA (Max.) 4) Address can be incremented automatically during read operations. 5) Auto erase and auto complete functions can be use during write operations. 6) A write instruction inhibit function allows : - write protection when power supply voltage is low. - write disable state at power up. - writing using command codes. 7) Compact packages 8) Display of READY / BUSY status 9) TTL-compatible input / output 10) Rewriting possible up to 100,000 times 11) Data can be stored for ten years without corruption. |
| 描述与应用 | 1）64字×16位EEPROM 2）工作电压范围 当阅读：2.0〜5.5V 写入时：2.7〜5.5V 3）低电流消耗 （5V）工作电流：3mA（最大） 待机（在5V）：5μA（最大） 4）地址可自动递增， 读操作。 5）自动擦除和自动完成功能可以使用 在写操作。 6）写指令抑制功能允许： - 写保护功能，当电源电压低。 - 写在上电时禁用状态。 - 使用命令代码写作。 7）小型封装 8）显示READY/ BUSY状态 9）TTL兼容的输入/输出 10）重写可能高达10万次 11）数据可以被存储十年没有腐败。 |
