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BSP135 MOSFET N-Channel 600V 120mA/0.12A SOT-223/SC-73/TO261-4 marking BSP135 high cross modulation performance/low feedback capacitance/low noise gain control amplification
| 最大源漏极电压Vds Drain-Source Voltage | 600V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 14V |
| 最大漏极电流Id Drain Current | 120mA/0.12A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.3Ω/Ohm @1.8A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.8-2V |
| 耗散功率Pd Power Dissipation | 1.8W |
| Description & Applications | SIPMOS ®Small-Signal-Transistor Features • N-channel • Depletion mode • dv /dt rated |
| 描述与应用 | SIPMOS®小信号晶体管 •N沟道 •耗尽模式 •dv / dt的额定 |
