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BSP42 NPN Transistors(BJT) 90V 1A 100MHz 40~120 500mV/0.5V SOT-223/SC-73 marking BSP42
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 90V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 80V |
集电极连续输出电流IC Collector Current(IC) | 1A |
截止频率fT Transtion Frequency(fT) | 100MHz |
直流电流增益hFE DC Current Gain(hFE) | 40~120 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 500mV/0.5V |
耗散功率Pc Power Dissipation | 1.5W |
Description & Applications | NPN transistors in miniature plastic envelopes for application in thick and thin-film circults. They are intended for use in telephony and general in industrial applications. |
描述与应用 | NPN晶体管微型塑料信封中,为在厚和薄膜circults的应用。 它们的目的是用于在电话和一般在工业应用中。 |