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BSS63 PNP transistors(BJT) -110V -100mA/-0.1A 50~95MHz 30 -250mV/-0.25V SOT-23/SC-59 marking BM high voltage

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
−110V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−100V
集电极连续输出电流IC
Collector Current(IC)
−100mA/-0.1A
截止频率fT
Transtion Frequency(fT)
50~95MHz
直流电流增益hFE
DC Current Gain(hFE)
30
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−250mV/-0.25V
耗散功率Pc
PoWer Dissipation
225mW/0.225W
Description & ApplicationsPNP high-voltage transistor High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
描述与应用PNP高电压晶体管 高电压晶体管 PNP硅 特点 •这些器件是无铅,无卤/ BFR免费,并符合RoHS标准
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