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BSS63 PNP transistors（BJT） -110V -100mA/-0.1A 50~95MHz 30 -250mV/-0.25V SOT-23/SC-59 marking BM high voltage
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | −110V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −100V |
| 集电极连续输出电流IC Collector Current(IC) | −100mA/-0.1A |
| 截止频率fT Transtion Frequency(fT) | 50~95MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 30 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | −250mV/-0.25V |
| 耗散功率Pc PoWer Dissipation | 225mW/0.225W |
| Description & Applications | PNP high-voltage transistor High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant |
| 描述与应用 | PNP高电压晶体管 高电压晶体管 PNP硅 特点 •这些器件是无铅，无卤/ BFR免费，并符合RoHS标准 |
