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BUK583-60A MOSFET N-Channel 20V 3A SOT-223/SC-73/TO261-4 marking 53-60A density battery designvery low RDS

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Product description
最大源漏极电压Vds Drain-Source Voltage20V
最大栅源极电压Vgs(±) Gate-Source Voltage8V
最大漏极电流Id Drain Current3A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.10Ω/Ohm @3.2A,5V
开启电压Vgs(th) Gate-Source Threshold Voltage1.2V
耗散功率Pd Power Dissipation1.25W
Description & Applications20V, 3.0A, RDS(ON)= 72mW @VGS = 4.5V. RDS(ON)= 110mW @VGS = 2.5V. High dense cell design for extremely low RDS(ON) Rugged and reliable. SOT-23 package.
描述与应用20V,3.0A, RDS(ON)=72MW@ VGS= 4.5V。 RDS(ON)=110mW的@ VGS=2.5V。 高密度电池设计极低的RDS(ON) 坚固,可靠。 SOT-23封装
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