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CBCX69TR PNP transistors（BJT） -25V -1A 65MHz 85~375 -500mV/-0.5V SOT-89/SC-62 marking BCX69 high current
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -25V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −20V |
| 集电极连续输出电流IC Collector Current(IC) | -1A |
| 截止频率fT Transtion Frequency(fT) | 65MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 85~375 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率Pc PoWer Dissipation | 1.2W |
| Description & Applications | SILICON COMPLEMENTARY SMALL SIGNAL TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CBCX68,CBCX69 types are complementary silicon transistor manufactured by epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high current capability |
| 描述与应用 | 硅互补小信号晶体管 产品描述： 中央半导体CBCX68，CBCX69类型是互补硅晶体管由外延平面工艺制造，环氧树脂模压在一个表面贴装封装，专为需要高电流能力的应用设计 |
