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CF739 MESFET-N channel 10V 6mA-60mA -2.5V SOT-143 marking HS RF application/low noise
| 最大源漏极电压Vds Drain-Source Voltage | 10V |
| 栅源极击穿电压V(BR)GS Gate-Source Voltage | -6V |
| 漏极电流(Vgs=0V)IDSS Drain Current | 6mA-60mA |
| 关断电压Vgs(off) Gate-Source Cut-off Voltage | -2.5V |
| 耗散功率Pd Power Dissipation | 240mW/0.24W |
| Description & Applications | GaAs FET. Features . N-channel dual-gate GaAs MES FET . Depletion mode transistor for tuned small- signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners . Low noise . High gain . Low input capacitance |
| 描述与应用 | 砷化镓场效应管. 特点: N沟道双栅的GaAs MES 场效应管. 耗尽型晶体管调谐小信号应用. 低噪音, 高增益 ,低输入电容. |
