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CLY10 MESFET-N channel 9V 1.2A-2.4A -2.8V SOT-223 marking CLY10 RF application
| 最大源漏极电压Vds Drain-Source Voltage | 9V |
| 栅源极击穿电压V(BR)GS Gate-Source Voltage | -6V |
| 漏极电流(Vgs=0V)IDSS Drain Current | 1.2A-2.4A |
| 关断电压Vgs(off) Gate-Source Cut-off Voltage | -2.8V |
| 耗散功率Pd Power Dissipation | 3.5W |
| Description & Applications | GaAs FET. * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8GHz 28.5 dBm typ. * High efficiency better 55 % |
| 描述与应用 | 砷化镓场效应管. 用于移动电话的电源放大器, 使用频率从400 MHz至2.5 GHz ,宽工作电压范围：2.7至6 V 高效率，高于55％. |
