CLY10 MESFET-N channel 9V 1.2A-2.4A -2.8V SOT-223 marking CLY10 RF application|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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CLY10 MESFET-N channel 9V 1.2A-2.4A -2.8V SOT-223 marking CLY10 RF application

Model：CLY10
Mark / screen / code / typing：CLY10
Manufacturer：
Date Code：04+
Package：SOT-223
Standard Package：1000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	9V
栅源极击穿电压V(BR)GS Gate-Source Voltage	-6V
漏极电流(Vgs=0V)IDSS Drain Current	1.2A-2.4A
关断电压Vgs(off) Gate-Source Cut-off Voltage	-2.8V
耗散功率Pd Power Dissipation	3.5W
Description & Applications	GaAs FET. * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8GHz 28.5 dBm typ. * High efficiency better 55 %
描述与应用	砷化镓场效应管. 用于移动电话的电源放大器, 使用频率从400 MHz至2.5 GHz ,宽工作电压范围：2.7至6 V 高效率，高于55％.

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