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CMBT857FW PNP transistors(BJT) -60V -200mA/-0.2A 200MHz 250~500 -300mV/-0.3V SOT-23/SC-59 marking PF
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -60V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −50V |
集电极连续输出电流IC Collector Current(IC) | −200mA/-0.2A |
截止频率fT Transtion Frequency(fT) | 200MHz |
直流电流增益hFE DC Current Gain(hFE) | 250~500 |
管压降VCE(sat) Collector-Emitter SaturationVoltage | -300mV/-0.3V |
耗散功率Pc PoWer Dissipation | 200mW/0.2W |
Description & Applications | PNP EPITAXIAL PLANAR SILICON TRANSISTOR |
描述与应用 | PNP外延平面硅晶体管 |