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CMPT5087 PNP transistors(BJT) -50V -50mA 40MHz 250~800 -300mV/-0.3V SOT-23/SC-59 marking C20 high gain /low noise

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-50V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−50V
集电极连续输出电流IC
Collector Current(IC)
-50mA
截止频率fT
Transtion Frequency(fT)
40MHz
直流电流增益hFE
DC Current Gain(hFE)
250~800
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-300mV/-0.3V
耗散功率Pc
PoWer Dissipation
350mW/0.35W
Description & ApplicationsDESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5086, CMPT5087 types are PNP silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high gain and low noise
描述与应用产品描述: 中央半导体CMPT5086,CMPT5087类型PNP硅 由外延平面工艺制造的晶体管,环氧树脂模制在一个表面 安装包,专为需要高增益和低噪声的应用
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