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CMPT5087 PNP transistors（BJT） -50V -50mA 40MHz 250~800 -300mV/-0.3V SOT-23/SC-59 marking C20 high gain /low noise
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −50V |
| 集电极连续输出电流IC Collector Current(IC) | -50mA |
| 截止频率fT Transtion Frequency(fT) | 40MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 250~800 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -300mV/-0.3V |
| 耗散功率Pc PoWer Dissipation | 350mW/0.35W |
| Description & Applications | DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5086, CMPT5087 types are PNP silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high gain and low noise |
| 描述与应用 | 产品描述： 中央半导体CMPT5086，CMPT5087类型PNP硅 由外延平面工艺制造的晶体管，环氧树脂模制在一个表面 安装包，专为需要高增益和低噪声的应用 |
