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CPH3215 NPN Transistors(BJT) 40V 1.5A 500MHz 200~560 225mV/0.225V SOT-23/SC-59 marking CQ DCswitch application
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 40V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 30V |
集电极连续输出电流IC Collector Current(IC) | 1.5A |
截止频率fT Transtion Frequency(fT) | 500MHz |
直流电流增益hFE DC Current Gain(hFE) | 200~560 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 225mV/0.225V |
耗散功率Pc Power Dissipation | 900mW/0.9W |
Description & Applications | NPN Epitaxial Planar Silicon Transistors DC Converter Applications Applications :Relay drivers, lamp drivers, motor drivers, and strobes. Features Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall-sized package permitting applied sets to be made small and slim (mounting height : 0.9mm). High allowable power dissipation. |
描述与应用 | NPN平面外延硅晶体管 DC转换器应用 应用范围:继电器驱动器,灯驱动器,电机驱动器和闪光灯。 特点 通过MBIT流程。 大电流容量。 低集电极 - 发射极饱和电压。 高速开关。 超小尺寸封装允许应用集 小巧玲珑(安装高度:0.9毫米)。 高允许功耗。 |