Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
CPH6316 Complex FET -30V -3A SOT-163/SOT23-6/CPH6 marking JS ultra high-speed switch 4V drive
| 最大源漏极电压Vds Drain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | -3A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 295mΩ@ VGS = -4V, ID = -0.5A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -1.2~-2.6V |
| 耗散功率Pd Power Dissipation | 1.6W |
| Description & Applications | P-Channel MOS Silicon FET High-Speed Switching Applications Features • Low ON-resistance. • High-speed switching. • 4V drive. |
| 描述与应用 | P沟道MOS硅FET 高速开关应用 特点 •低导通电阻。 •高速开关。 •4V驱动器。 |
