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CPH6701 Complex Bipolar Transistor+doides -3A 11V SOT-163 marking PA PNP+SBD
| 三极管BJT类型 TYPE | PNP |
| 三极管BJT集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -15V |
| 三极管BJT集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -12V |
| 三极管BJT集电极连续输出电流IC Collector Current(IC) | -3A |
| 三极管BJT截止频率fT Transtion Frequency(fT) | 280MHz |
| 三极管BJT直流电流增益hFE DC Current Gain(hFE) | -500mA |
| 三极管BJT管压降VCE（sat） Collector-Emitter Saturation Voltage | -110~-165mV |
| 二极管DIODE类型 TYPE | 肖特基-单管 SBD-Single |
| 二极管DIODE反向电压VR Reverse Voltage | 11V |
| 二极管DIODE正向整流电流Io Rectified Current | 500mA |
| 二极管DIODE正向电压降VF Forward Voltage(Vf) | 400mV~450mV |
| 耗散功率Pc Power Dissipation | 1.3W |
| Description & Applications | Features • TR : PNP Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode • DC/DC Converter Applications • Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitating high-density mounting. • The CPH6701 is formed with two chips, one being equivalent to the CPH3106 and the other the SBS001, encapsulated in one package. • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). |
| 描述与应用 | 特点 •TR：PNP平面外延硅晶体管 SBD：肖特基二极管 •DC / DC转换器应用 •复合型与PNP晶体管和肖特基势垒二极管中包含一个包装促进高密度安装。 •CPH6701形成有两个芯片，一个相当于CPH3106和其他SBS001，封装在一个封装中。 •超小封装，有利于小型化的高端产品（安装高度：0.9毫米）。 |
