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CPH6701 Complex Bipolar Transistor+doides -3A 11V SOT-163 marking PA PNP+SBD

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Product description
三极管BJT类型 TYPE PNP
三极管BJT集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) -15V
三极管BJT集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) -12V
三极管BJT集电极连续输出电流IC Collector Current(IC) -3A
三极管BJT截止频率fT Transtion Frequency(fT) 280MHz
三极管BJT直流电流增益hFE DC Current Gain(hFE) -500mA
三极管BJT管压降VCE(sat) Collector-Emitter Saturation Voltage -110~-165mV
二极管DIODE类型 TYPE 肖特基-单管 SBD-Single
二极管DIODE反向电压VR Reverse Voltage 11V
二极管DIODE正向整流电流Io Rectified Current 500mA
二极管DIODE正向电压降VF Forward Voltage(Vf) 400mV~450mV
耗散功率Pc Power Dissipation 1.3W
Description & Applications Features • TR : PNP Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode • DC/DC Converter Applications • Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitating high-density mounting. • The CPH6701 is formed with two chips, one being equivalent to the CPH3106 and the other the SBS001, encapsulated in one package. • Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm).
描述与应用 特点 •TR:PNP平面外延硅晶体管  SBD:肖特基二极管 •DC / DC转换器应用 •复合型与PNP晶体管和肖特基势垒二极管中包含一个包装促进高密度安装。 •CPH6701形成有两个芯片,一个相当于CPH3106和其他SBS001,封装在一个封装中。 •超小封装,有利于小型化的高端产品(安装高度:0.9毫米)。
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