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CXT3019 NPN Transistors(BJT) 140V 1A 100MHz 100~300 500mV/0.5V SOT-89 marking CXT3019 high voltage amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 140V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 80V |
| 集电极连续输出电流IC Collector Current(IC) | 1A |
| 截止频率fT Transtion Frequency(fT) | 100MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 100~300 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率Pc Power Dissipation | 1.2W |
| Description & Applications | SURFACE MOUNT NPN SILICON TRANSISTORS The CENTRAL SEMICONDUCTOR CXT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. |
| 描述与应用 | 表面贴装 NPN硅晶体管 中央半导体CXT5551型硅NPN晶体管由外延平面工艺，环氧树脂模压在一个表面贴装封装，高电压放大器应用设计制造。 |
