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DDTC123EE-7 NPN Bipolar Digital Transistor (BRT) 100mA/0.1A 2.2k 2.2k sot-523 marking H04
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 基极输入电阻R1 Input Resistance(R1) | 2.2KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 2.2KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 1 |
| 直流电流增益hFE DC Current Gain(hFE) | 20 |
| 截止频率fT Transtion Frequency(fT) | 250MHz |
| 耗散功率Pc Power Dissipation | 0.15W/150mW |
| Description & Applications | Features • Epitaxial Planar Die Construction • Complementary PNP Types Available (DDTA) • Built-In Biasing Resistors, R1 = R2 • Lead Free/RoHS Compliant • "Green" Device |
| 描述与应用 | 特性 •外延平面模具构建 •互补PNP类型可用（DDTA） •内置偏置电阻R1= R2 •无铅/ RoHS标准 •“绿色”设备 |
